DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

A Miniature DC-to-50 G Distributed Sw

A dc-to-50-GHz SPDT switch in standard bulk 0.18m CMOS process is demonstrated in this paper. In order to extend the operation frequency, the travelingwave circuit topology is utilized. The switch achieves a measured insertion loss of less than 6 dB, a measured isolation of better than 38 dB from dc to 50 GHz. The measured input P1dB of 17.4 dBm at 5.8 GHz and 19.6 dBm at 40 GHz is attained. Th...

Analysis of a Novel Strained Silicon RF LDMOS

In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and...

Interaction Region RF Shield Issues

Double Bundle Method for Nonsmooth DC Optimization

The aim of this paper is to introduce a new proximal double bundle method for unconstrained nonsmooth DC optimization, where the objective function is presented as a difference of two convex (DC) functions. The novelty in our method is a new stopping procedure guaranteeing Clarke stationarity for solutions by utilizing only DC components of the objective function. This optimality condition is s...

Reliability Study of Power Rf Ldmos Devices under Thermal Stress

This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied on power RF LDMOS: Thermal Shock Tests (TST, air-air test) and Thermal Cycling Tests (TCT, airair test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ∆T). The performances shift for some critical electrical parameters...